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IRF250SMD
MECHANICAL DATA Dimensions in mm (inches)
N-CHANNEL POWER MOSFET
3 .6 0 (0 .1 4 2 ) M ax.
0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 )
1
3
0 .7 6 (0 .0 3 0 ) m in .
VDSS ID(cont) RDS(on)
FEATURES
200V 14A W 0.100W
1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
2
1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 )
* HERMETICALLY SEALED SURFACE MOUNT PACKAGE * SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.
9 .6 9 .3 1 1 .5 1 1 .2
7 (0 8 (0 8 (0 8 (0
.3 8 .3 6 .4 5 .4 4
1)
9) 6) 4)
0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 )
* SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT * HIGH PACKING DENSITIES
SMD1 Package
Pad 1 - Gate Pad 2 - Drain Pad 3 - Source
Note: IRFNxxx also available with pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL RqJC RqJ-PCB Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery 3 Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case Thermal Resistance Junction to PCB (Typical)
2
20V (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 22A 14A 88A 100W 0.8W/C 500mJ 5.0V/ns -55 to 150C 300C 1.25C/W 3C/W
Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 50V , L 1.5mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 22A , di/dt 190A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 2.35W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00
IRF250SMD
ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated)
Parameter
BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage
Test Conditions
VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS
1
Min.
200
Typ.
Max.
Unit
V
ID = 1mA
DBVDSS Temperature Coefficient of DTJ Breakdown Voltage
RDS(on) Static Drain - Source On-State Resistance
1
Reference to 25C ID = 14A ID = 22A ID = 250mA IDS = 14A VDS = 0.8BVDSS TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 22A
1
0.29 0.100 0.105 2 9 25 250 100 -100 3500 700 110 4
V / C
W
V S(W )W(
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance
VDS 15V VGS = 0
Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 1 Gate - Source Charge 1 Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
mA
nA
pF
ID = 22A
55 8 30
115 22 60 35 190 170 130 22 88
nC nC
VDS = 0.5BVDSS VDD = 100V ID = 22A RG = 2.35W
ns
SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current
2
A V ns
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
IS = 22A VGS = 0 IF = 22A
TJ = 25C TJ = 25C Negligible 0.8 2.8
1.9 950 9.0
di / dt 100A/ms VDD 50V
mC
PACKAGE CHARACTERISTICS Internal Drain Inductance (from centre of drain pad to die) Internal Source Inductance (from centre of source pad to end of source bond wire)
nH
Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00

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